Speaker
Aleš Vlk
Description
Defect states in semiconductors are one of the main focuses of all semiconductor studies. Many different approaches are used to determine the defect’s origin, character and densities. One of the often overlooked semiconductor’s parameters related to the defect states is the Urbach energy. It is an easily accessible measure of material disorder. Here, the process of obtaining the Urbach energy and the information which can be gained from it will be discussed.
Primary authors
Aleš Vlk
Martin Ledinský
Zdeňka Hájková
Lucie Landová
(Laboratory of Nanostructures and Nanomaterials, Institute of Physics, ASCR, Prague, Czech Republic)
